Power semiconductor arrangement

US10163761B2 · kind B2 · utility

Assignee

• SEMIKRON ELEKTRONIK GMBH & CO. KG · DE

Inventors

• Ingo Bogen · Nuremberg, DE
• Ludwig Hager · Burghausen, DE
• Rainer Weiß · Erlangen, DE

Key dates

• Filing date: May 15, 2015
• Grant date: Dec 25, 2018
• Expiry date: Jun 17, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H02M7/003
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor device comprises a substrate; and power semiconductor components disposed on and connected thereto. The device includes a housing part with a housing wall having a first cutout. The device has, for making electrical contact therewith, a unitary load connection element which passes through the first cutout in an X direction, is electrically conductive, and has an outer connection section disposed outside the housing part and an inner connection section disposed within the housing part. A first bush which has an internal thread running in the X direction is rotationally fixed and movable in the X direction in the housing wall. The first outer connection section has a second cutout aligned with the first bush. The load connection element has a first holding element disposed near the first cutout, the holding element engaging in a groove in the housing wall which runs perpendicular to the X direction.