Transferring method, manufacturing method, device and electronic apparatus of micro-LED
US10163869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2015 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Oct 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.