CMOS image sensor
US10163958B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Jul 28, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jul 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
Abstract
A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate having a front side and a back side and a pixel region having a plurality of pixels in the front side, each pixel including a sensor element, forming a metal reflective layer in the front side of the substrate and on the pixel region, thinning the back side of the substrate, doping the thinned back side of the substrate with a dopant, and laser annealing the doped back side of the substrate. The sensor element is configured to receive incident light to the thinned back side of the semiconductor substrate. The metal reflective layer reflects heat generated in the laser annealing process to more fully activate the dopant in the back side of the substrate, thereby effectively reducing dark current and improving the device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.