Complementary resistance switchable filler and nonvolatile complementary resistance switchable memory comprising the same
US10163983B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Nov 20, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a core-shell structure containing: a wire-type conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material. Because a first resistive layer, a conductive layer and a second resistive layer are formed as one layer and bipolar conductive filaments are formed on the substantially different resistive layers, the memory can exhibit complementary resistive switching characteristics. In addition, the complementary resistance switchable memory of the present disclosure can be prepared through a simplified process at low cost by introducing a simple process of coating a paste in which a complementary resistance switchable filler and a supporting material are mixed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.