Method of fabricating a semiconductor device
US10164067B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Jul 7, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jul 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a gate electrode structure over a first region of a semiconductor substrate, and selectively forming an oxide layer overlying the gate electrode structure by reacting a halide compound with oxygen to increase a height of the gate electrode structure. The halide compound may be silicon tetrachloride, and the oxide layer may be silicon dioxide. The gate electrode structure may be a dummy gate electrode, which is subsequently removed, and replaced with another gate electrode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.