Apparatus and method for memory device
US10164073B2 · kind B2 · utility
2Cited by
39References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2015 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Aug 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method comprises forming a gate stack over a substrate, applying an oxygen flush process to the gate stack, forming a uniform oxide layer on the gate stack as a result of performing the step of applying the oxygen flush process and removing the uniform oxide layer through a pre-clean process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.