Optoelectronic semiconductor chip

US10164134B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Asako Hirai · Lompoc, US
• Tobias Meyer · Durham, US
• Philipp Drechsel · Regensburg, DE
• Peter Stauß · Nittendorf, DE
• Anna Nirschl · Regenstauf, DE
• Alvaro Gomez-Iglesias · Regensburg, DE
• Tobias Niebling · Regensburg, DE
• Bastian Galler · Regensburg, DE

Key dates

• Filing date: Mar 29, 2016
• Grant date: Dec 25, 2018
• Expiry date: Mar 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812

Abstract

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.