Memristive device based on alkali-doping of transitional metal oxides
US10164179B2 · kind B2 · utility
7Cited by
4References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 13, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jan 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments are directed to a memristive device. The memristive device includes a first conductive material layer. An oxide material layer is arranged on the first conductive layer. And a second conductive material layer is arranged on the oxide material layer, wherein the second conductive material layer comprises a metal-alkali alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.