Organic semiconductor compound and method for manufacturing the same
US10164190B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Jan 4, 2016 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | May 7, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An organic semiconductor compound and a method for manufacturing the same is provided. The method for manufacturing the organic semiconductor compound may include stirring a solated organic semiconductor and a solated organometallic precursor. Herein, the manufacturing the organic semiconductor compound includes: forming a three-dimensional organic semiconductor compound by allowing the solated organic semiconductor to orthogonally penetrate one or more gaps in a lattice structure of a gelated organometallic precursor formed by stirring the solated organometallic precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.