Sensing and detection of ESD and other transient overstress events
US10164426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2016 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | May 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated circuit includes an I/O pad and a protection device coupled to the I/O pad and a first supply node. A transient event detector includes a latch; a first transistor having a first current electrode coupled to the I/O pad, a control electrode coupled to a first supply node, and a second current electrode coupled to a data input of the latch, wherein the latch is configured to store an indication that a transient event occurred. An event level sensor includes a first transistor having a first current electrode coupled to the I/O pad, a control electrode coupled to the protection device, and a second current electrode coupled to a load circuit; a rectifier device coupled between the second current electrode and a capacitor; a second transistor having a control electrode coupled to the capacitor; and an output circuit configured to place a current on a first sense bus proportional to a current through the load circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.