Driving method for power semiconductor switches in H-bridge circuit
US10164515B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Feb 7, 2018 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Feb 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/0058
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A driving method for power semiconductor switches in an H-bridge circuit is provided. The method includes: calculating a start time and an end time of a zero level of an output voltage and determining a zero level section based on the start time and end time of the zero level; and driving an upper power semiconductor switch of a first bridge arm and an upper power semiconductor switch of a second bridge arm to be on simultaneously or driving a lower power semiconductor switch of the first bridge arm and a lower power semiconductor switch of the second bridge arm to be on simultaneously in the zero level section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.