Patent · US Active

Isolating noise sources and coupling fields in RF chips

US10164681B2 · kind B2 · utility

2Cited by
57References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 5, 2017
Grant dateDec 25, 2018
Priority date
Expiry dateJun 5, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19105
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor die comprises a first active device, at least one of a second active device and a passive component, and electromagnetic shielding configured to at least partially electromagnetically isolate the first active device from the at least one of the second active device and the passive component. The electromagnetic shielding includes one of a grounded metal layer and via stack, and a grounded metal layer disposed one of above and below the first active device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.