Indium tin oxide thin films with both near-infrared transparency and excellent resistivity
US10167545B2 · kind B2 · utility
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Key dates
| Filing date | Apr 20, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Apr 20, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An indium tin oxide film containing by weight about 90% In2O3 and about 10% SnO2 is prepared using a low-energy deposition sputter process on a substrate. The indium tin oxide film thus obtained has a carrier concentration on the order of 1020/cm3 and a carrier mobility greater than 30 cm2/Vs. The low carrier concentration results in an increased transmission in the near infra-red region, while the high carrier mobility results in good conductive properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.