Patent · US Active

Method for determining a deterioration of power semiconductor modules as well as a device and circuit arrangement

US10168381B2 · kind B2 · utility

1Cited by

0References

15Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Jimmy-Alexander Butron-Ccoa · Zorneding, DE
Andreas Lindemann · Lampertheim, DE
Gerhard Mitic · Munich, DE

Key dates

Filing date	Dec 18, 2015
Grant date	Jan 1, 2019
Priority date	—
Expiry date	Dec 18, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2017/0806
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The present disclosure relates to power semiconductor modules. The teachings thereof may be embodied in modules with a power semiconductor component and methods, as well as a circuit arrangement. For example, a method may include: developing a thermal model of the power semiconductor module at a reference time point; establishing a reference temperature based on the thermal model; measuring a temperature-sensitive electrical parameter of the power semiconductor module during operation of the power semiconductor module; determining a current temperature from the measured temperature-sensitive electrical parameter of the power semiconductor module; calculating a temperature difference between the current temperature and the reference temperature; and determining a deterioration of the power semiconductor module based on the calculated temperature difference.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.