Fabrication of porous silicon electrochemical capacitors
US10170244B2 · kind B2 · utility
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4References
29Claims
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Key dates
| Filing date | Dec 27, 2011 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Aug 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/13
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.