Systems and methods for a tunable electromagnetic field apparatus to improve doping uniformity
US10170313B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2016 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | May 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32715
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for improving doping and/or deposition uniformity using a tunable electromagnetic field generation device are provided. In an exemplary embodiment, the system includes a chamber configured to contain a semiconductor wafer, a plasma generator, and a gas inlet, and an exhaust gas outlet. The gas inlet permits a controlled flow of a gas into the chamber through a wall of the chamber and the exhaust gas outlet permits exhausting of gas from the chamber. The system further includes a wafer support structure configured to support the semiconductor wafer during a doping or deposition process and an electromagnetic structure positioned within the chamber and at least partially surrounding an upper surface of the wafer support structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.