Semiconductor device and method of fabricating the same
US10170472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Jun 26, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/412
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate first through fourth active fins on the substrate, extending in a first direction, and spaced apart from one another in a second direction that intersects the first direction, a first gate electrode extending in the second direction and on the first active fin to overlap with the first active fin but not with the second through fourth active fins, a second gate electrode extending in the second direction and on the second and third active fins to overlap with the second active fin but not with the first and fourth active fins, a first contact on the first gate electrode and connected to a first wordline, and a second contact on the second gate electrode and connected to a second wordline. The first through third active fins are between the first and second contacts. Related devices are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.