Patent · US Active

Thyristor with improved plasma spreading

US10170557B2 · kind B2 · utility

0Cited by
2References
21Claims
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Key dates

Filing dateNov 29, 2017
Grant dateJan 1, 2019
Priority date
Expiry dateNov 29, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/131

Abstract

There is provided a thyristor having emitter shorts, wherein in an orthogonal projection onto a plane parallel to a first main side, a contact area covered by an electrical contact of a first electrode layer with a first emitter layer and the emitter shorts includes areas in the shape of lanes, in which an area coverage of the emitter shorts is less than the area coverage of emitter shorts in the remaining area of the contact area, wherein the area coverage of the emitter shorts in a specific area is the area covered by the emitter shorts in that specific area relative to the specific area. The thyristor of the invention exhibits a fast turn-on process even without complicated amplifying gate structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.