Semiconductor device, display device, display apparatus, and system
US10170635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2016 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Mar 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/3035
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.