Patent · US Active

Inverted metamorphic multijunction solar cell with a single metamorphic layer

US10170656B2 · kind B2 · utility

0Cited by
55References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 17, 2015
Grant dateJan 1, 2019
Priority date
Expiry dateMar 15, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

The present disclosure provides a multijunction solar cell that includes: a first sequence of layers of semiconductor material forming a first set of one or more solar subcells; a graded interlayer adjacent to said first sequence of layers; a second sequence of layers of semiconductor material forming a second set of one or more solar subcells; and a high band gap contact layer adjacent said second sequence of layers, wherein the high band gap contact layer is composed of p++ type InGaAlAs or InGaAs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.