Inverted metamorphic multijunction solar cell with a single metamorphic layer
US10170656B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2015 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Mar 15, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present disclosure provides a multijunction solar cell that includes: a first sequence of layers of semiconductor material forming a first set of one or more solar subcells; a graded interlayer adjacent to said first sequence of layers; a second sequence of layers of semiconductor material forming a second set of one or more solar subcells; and a high band gap contact layer adjacent said second sequence of layers, wherein the high band gap contact layer is composed of p++ type InGaAlAs or InGaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.