Method for producing a vertical organic field-effect transistor, and vertical organic field-effect transistor

US10170715B2 · kind B2 · utility

Assignee

• Novaled GmbH · DE

Inventors

• Hans Kleemann · Dresden, DE
• Gregor Schwartz · Dresden, DE

Key dates

• Filing date: Jan 27, 2017
• Grant date: Jan 1, 2019
• Expiry date: Jul 21, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/13

Abstract

The invention relates to a method for producing a vertical organic field-effect transistor, in which a vertical organic field-effect transistor with a layer arrangement is produced on a substrate, said layer arrangement including transistor electrodes, namely a first electrode (23; 24), a second electrode (23; 24) and a third electrode (32), electrically insulating layers (25; 34) and an organic semiconductor layer (28). In addition, a vertical organic field-effect transistor is provided, which includes a layer arrangement with transistor electrodes on a substrate (21).