Controlling uniformity of lateral oxidation of wafer surface features using a vertical stack of horizontal wafers
US10170889B1 · kind B1 · utility
2Cited by
6References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 14, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Aug 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In some implementations, a method may include introducing oxygen into a furnace that contains a vertical stack of horizontal wafers. The oxygen may enter the furnace at a location above the vertical stack. A patterned wafer, included in the vertical stack, may include one or more surface features, and a surface feature, of the one or more surface features, may include one or more layers capable of being oxidize. The method may include causing lateral oxidation of at least one layer, of the one or more layers, based on introducing the oxygen into the furnace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.