AlGaInP-based semiconductor laser
US10170891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2016 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Jul 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp≤1), and xn and xp satisfy a relationship of xn<xp.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.