Sulfonium compound, resist composition, and pattern forming process
US10173975B2 · kind B2 · utility
4Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Oct 11, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Oct 11, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/46
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A sulfonium compound having formula (1) is provided wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved LWR and pattern collapse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.