Edge-coupled semiconductor photodetector
US10175099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Aug 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0683
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A device is disclosed for monitoring power from a laser diode. The device includes a substrate having a top surface and a first facet perpendicular to the top surface through which light enters the substrate. The device further includes a second facet onto which light that has entered the substrate through the first facet along an optical axis that is non-normal to the first facet is incident. The device further includes a photodiode fabricated on the top surface of the substrate for measuring an intensity of the light that enters the first facet of the substrate along the optical axis that is non-normal to the first facet. The light that has entered the substrate through the first facet along the optical axis that is non-normal to the first facet is reflected by the second facet toward a photoactive region of the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.