Measurement technique for thin-film characterization
US10175180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2015 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Jan 24, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N22/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A measurement device comprises a high permittivity dielectric resonator (10) with a low microwave loss tangent and having at least a first symmetry axis (z-i); an electrically conductive resonance chamber (100) containing and geometrically similar to the resonator (10) and having a second symmetry axis (z2) coincident with the first symmetry axis (z-i); the resonance chamber (100) having a plurality of similar ports (104) orthogonal to the first symmetry axis (z-i), each such port (104) having a microwave antenna (114), either to inject microwaves into the resonance chamber, thereby to excite an electric field in the resonator, or to receive microwaves from the resonance chamber; and a comparator circuit (200, 300, 400, 500, 600, 700, 800) connected to a first one (P1) of the plurality of ports (104) to inject microwaves into the resonance chamber and to another (P2, P3) of the plurality of ports (104) to receive microwaves from the resonance chamber; wherein the measurement device further comprises an electrically conductive tuning screw (106) in electrical contact with the resonance chamber (100), the tuning screw being at least partially positionable in the electric field thereb…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.