Patent · US Active

Planarization of optical substrates

US10175391B2 · kind B2 · utility

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12Claims
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Key dates

Filing dateJan 25, 2013
Grant dateJan 8, 2019
Priority date
Expiry dateMay 21, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/265
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Planarization of defects in laser mirror and other optical component manufacture is disclosed. The planarization is performed by first depositing a relatively thick planarization layer, then carrying out a sequential deposition and etch process. The technique takes advantage of the non-uniform material removal rate as a function of etchant incident angle, and effectively buries the inclusion in a thick film with a near planar top surface. The process enables faster, more reliable manufacture of a non-defective high fluence multilayer mirror particularly suitable for high energy laser applications.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.