Tunnel valve read sensor with crystalline alumina tunnel barrier deposited using room temperature techniques
US10176831B2 · kind B2 · utility
0Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Aug 14, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In one general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.