Method of manufacturing integrated circuit device
US10176989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Sep 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing an integrated circuit device and an integrated circuit device prepared according to the method, the method including forming a silicon oxycarbonitride (SiOCN) material layer on an active region of a substrate, the forming the SiOCN material layer including using a precursor that has a bond between a silicon (Si) atom and a carbon (C) atom; etching a portion of the active region to form a recess in the active region; baking a surface of the recess at about 700° C. to about 800° C. under a hydrogen (H2) atmosphere, and exposing the SiOCN material layer to the atmosphere of the baking while performing the baking; and growing a semiconductor layer from the surface of the recess baked under the hydrogen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.