High-quality, single-crystalline silicon-germanium films
US10176991B1 · kind B1 · utility
3Cited by
9References
24Claims
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Key dates
| Filing date | Jul 6, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Jul 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/222
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si(1-x)Gex films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.