Semiconductor structure and fabrication method therefor
US10177026B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 17, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Jul 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.