Preparation method for heterogeneous SiGe based plasma P-I-N diode string for sleeve antenna
US10177141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Dec 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A preparation method for a SiGe based plasma p-i-n diode string for a sleeve antenna is provided. The preparation method includes: selecting a SiGeOI substrate with a certain crystal orientation and forming isolation regions on the SiGeOI substrate; etching the substrate to form P-type trenches and N-type trenches, depths of the P-type trenches and the N-type trenches each being smaller than a thickness of a top SiGe layer of the substrate; filling the P-type trenches and the N-type trenches and forming P-type active regions and N-type active regions in the top SiGe layer of the substrate by an ion implantation process; and forming leads on the substrate so as to obtain the heterogeneous SiGe based plasma p-i-n diode. Therefore, a high-performance heterogeneous SiGe based plasma p-i-n diode suitable for forming a solid-state plasma antenna is prepared by using a deep trench isolation technology and the ion implantation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.