Patent · US Active

Semiconductor device and structure

US10177147B2 · kind B2 · utility

0Cited by
2References
8Claims
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Assignee

Inventor

Key dates

Filing dateApr 21, 2016
Grant dateJan 8, 2019
Priority date
Expiry dateApr 21, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/937

Abstract

A semiconductor device is provided. Gates of first PMOS and NMOS transistors are coupled together for receiving an input signal. Gates of second PMOS and NMOS transistors are coupled together. Gates of third PMOS and NMOS transistors are coupled together. Gates of fourth PMOS and NMOS transistors are coupled together. Drains of fourth PMOS and NMOS transistors are coupled together for providing an output signal. When the first, second, third and fourth NMOS transistors are connected in parallel and the first, second, third and fourth PMOS transistors are connected in parallel, the output signal is provided according to the input signal and a first logic function. When the first and second NMOS transistors are connected in serial and the first and second PMOS transistors are connected in serial, the output signal is provided according to the input signal and a second logic function.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.