Array of mesa photodiodes with an improved MTF

US10177193B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Mollard · Grenoble, FR
• Nicolas Baier · Biviers, FR

Key dates

• Filing date: May 6, 2015
• Grant date: Jan 8, 2019
• Expiry date: May 6, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

An array of mesa photodiodes, including a useful layer of CdxHg1-xTe wherein pads are formed. The array includes a first doped zone having a first N or P doping; and second doped zones having a second P or N doping of a different type from that of the first doping, and each extending on an upper region of a pad. The first doped zone includes at least one first region having a first doping density, located at least under each of the pads; and at least one second region, located between two neighboring pads, and having a second doping density higher than the first doping density, each second region being separated from the closest second doped zone by at least one portion of the first region.