Silicon carbide semiconductor device
US10177233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2016 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Apr 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes a gate insulating film and a gate electrode. A first main surface is provided with a trench defined by a side surface penetrating a third impurity region and a second impurity region to reach a first impurity region, and a bottom provided continuously with the side surface. In a stress test in which a gate voltage of at least one of −10 V and 20 V is applied to the gate electrode for 100 hours at a temperature of 175° C., where a threshold voltage before the stress test is defined as a first threshold voltage and a threshold voltage after the stress test is defined as a second threshold voltage, an absolute value of a difference between the first threshold voltage and the second threshold voltage is not more than 0.25 V. The second threshold voltage is not less than 2.5 V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.