Semiconductor device, inverter circuit, drive device, vehicle, and elevator

US10177251B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Tatsuo Shimizu · Shinagawa, JP
• Takashi Shinohe · Yokosuka, JP
• Ryosuke Iijima · Setagaya, JP

Key dates

• Filing date: Feb 8, 2018
• Grant date: Jan 8, 2019
• Expiry date: Feb 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/661

Abstract

A semiconductor device according to an embodiment includes a silicon carbide layer having a first plane and a second plane; a source electrode; a drain electrode; first and second gate electrodes located; an n-type drift region and a p-type body region; n-type first and second source regions; a p-type first silicon carbide region and p-type second silicon carbide region having a p-type impurity concentration higher than the body region; first and second gate insulating layers; a p-type third silicon carbide region contacting the first silicon carbide region, a first n-type portion being located between the first gate insulating layer and the third silicon carbide region; and a p-type fourth silicon carbide region contacting the second silicon carbide region, a second n-type portion being located between the second gate insulating layer and the fourth silicon carbide region.