Photodetector
US10177267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Mar 15, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
An UV photodetector includes: a substrate, a template layer formed on the substrate, an intrinsic AlGaN layer formed on the template layer, a first n-type AlGaN layer and a second n-type AlGaN layer formed on the intrinsic AlGaN layer side-by-side and separated by a gap, wherein the gap exposes the intrinsic AlGaN layer. Another UV photodetector includes: an UV transparent substrate, an UV transparent template layer formed on the substrate, a first UV transparent n-type AlGaN layer formed on the UV transparent template layer, an intrinsic AlGaN layer formed on the first UV transparent n-type AlGaN layer, a second n-type AlGaN layer formed on the intrinsic AlGaN layer, and a p-type layer formed on the second n-type AlGaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.