Semiconductor light emitting device
US10177278B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Apr 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.