Methods of fabricating magnetic memory devices
US10177307B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Mar 30, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Apr 11, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5615
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of fabricating a magnetic memory device. The method of a fabricating a magnetic memory device includes forming an interlayer dielectric layer on a substrate, forming a sacrificial pattern in the interlayer dielectric layer, forming a magnetic tunnel junction pattern on the sacrificial pattern, after forming the magnetic tunnel junction pattern, selectively removing the sacrificial pattern to form a bottom contact region in the interlayer dielectric layer, and forming a bottom contact in the bottom contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.