Surface acoustic wave (SAW) resonator
US10177735B2 · kind B2 · utility
5Cited by
32References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2016 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Jul 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02559
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 μm to approximately 30.0 μm, and is substantially without iron (Fe).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.