Semiconductor gas sensor device and manufacturing method thereof
US10180406B2 · kind B2 · utility
1Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2017 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Nov 9, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N30/66
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.