Sulfonium salt, resist composition, and patterning process
US10180626B2 · kind B2 · utility
8Cited by
3References
19Claims
0Family size
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Key dates
| Filing date | Sep 13, 2017 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Sep 13, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
On use of a sulfonium salt of specific structure as PAG, acid diffusion is suppressed. A resist composition comprising the sulfonium salt forms a pattern with improved lithography properties including EL, MEF and LWR when processed by lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.