Memory device comprising resistance change material and method for driving the same
US10181348B2 · kind B2 · utility
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15References
20Claims
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Key dates
| Filing date | Aug 15, 2017 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Aug 15, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2245
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory element or device includes: a first, main, memory cell area including a plurality of first resistive memory cells; and a second, buffer, memory cell area including a plurality of second resistive memory cells. The first resistive memory cells of the main memory cell area are configured to store data therein, and the second resistive memory cells of the buffer memory cell area are configured to temporarily store portions of the data therein for at least a stabilization time period while the portions of the data stabilize in the main memory cell area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.