Nonvolatile memory cross-bar array
US10181349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2014 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Dec 15, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided in one example is a nonvolatile memory cross-bar array. The array includes: a number of junctions formed by a number of row lines intersecting a number of column lines; a first set of controls at a first set of the junctions coupling between a first set of the row lines and a first set of the column lines; a second set of controls at a second set of the junctions coupling between a second set of the row lines and a second set of the column lines; and a current collection line to collect currents from the controls of the first set and the second set through their respective column lines and output a result current corresponding to a sum of a first dot product and a second dot product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.