Method of manufacturing semiconductor device
US10181450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2017 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Feb 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.