Semiconductor device including transistor having low parasitic capacitance
US10181531B2 · kind B2 · utility
13Cited by
34References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2016 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Jun 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor and a second insulator embedded in a first insulator, a second conductor and a third conductor. Edges of the second conductor and the third conductor facing each other each has a taper angle of 30 degree or more and 90 degree or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.