Piezoelectric thin film and piezoelectric thin film device
US10181554B2 · kind B2 · utility
1Cited by
2References
6Claims
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Key dates
| Filing date | Aug 12, 2016 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Aug 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/076
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A piezoelectric thin film contains potassium sodium niobate represented by general formula (K1-xNax)NbO3 and CaTiO3, wherein the lattice spacing calculated from the diffraction peak of the (001) plane in an X-ray diffraction profile of the piezoelectric thin film is 3.975 Å or less, and the ratio I101/I001 of the diffraction peak intensity I101 of the (101) plane to the diffraction peak intensity I001 of the (001) plane in the X-ray diffraction profile of the piezoelectric thin film 3 satisfies the relationship log10(I101/I001)≤−2.10.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.