Patent · US Active

Submicron sized silicon powder with low oxygen content

US10181600B2 · kind B2 · utility

1Cited by
2References
17Claims
0Family size

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Key dates

Filing dateJun 22, 2011
Grant dateJan 15, 2019
Priority date
Expiry dateNov 2, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E60/10
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A submicron sized Si based powder having an average primary particle size between 20 nm and 200 nm, wherein the powder has a surface layer comprising SiOx, with 0<x<2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or less than 3% by weight at room temperature. The method for making the powder comprises a step where a Si precursor is vaporized in a gas stream at high temperature, after which the gas stream is quenched to obtain Si particles, and the Si particles are quenched at low temperature in an oxygen containing gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.