Patent · US Active

Semiconductor laser having a ridge structure widened on one side

US10181700B2 · kind B2 · utility

0Cited by

2References

16Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Christoph Eichler · Donaustauf, DE
Jens Müller · Regensburg, DE
Fabian Kopp · Bukit Mertajam, MY

Key dates

Filing date	Oct 14, 2014
Grant date	Jan 15, 2019
Priority date	—
Expiry date	Oct 14, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/4031
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor laser includes a main body and a ridge structure arranged on the main body, the ridge structure being oriented along a longitudinal axis above an active zone, wherein the ridge structure has a first width, the ridge structure has two opposite end faces along the longitudinal axis, adjacent to at least one end face, the ridge structure has an end section arranged on one side with respect to a center axis of the ridge structure such that the ridge structure is widened on one side adjacent to the end face, and on an opposite side of the ridge structure relative to the end section a fracture trench is arranged adjacent to the end face and at a distance from the ridge structure in a surface of the main body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.