Bulk acoustic resonator devices and processes for fabricating bulk acoustic resonator devices
US10181835B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2016 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Jul 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/173
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a bulk acoustic resonator device, at least one additional metal feature is formed on a top surface of the bottom electrode at a location at which the bottom electrode electrical contact will subsequently be formed, thereby thickening the metal at the location below where the piezoelectric material layer will be etched to form the opening for the bottom electrode electrical contact. Consequently, even though some of the metal of the additional metal feature and/or of the bottom electrode will be removed during the process of etching the opening in the piezoelectric material layer, the bottom electrode will always retain sufficient thickness after the piezoelectric material layer is etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.